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| Ordering number : ENN5442A 2SJ456 P-Channel Silicon MOSFET 2SJ456 Ultrahigh-Speed Switching Applications Features * * * Package Dimensions unit : mm 2128 [2SJ456] 8.2 7.8 6.2 3 8.4 10.0 0.4 0.2 Low ON-resistance. High-speed diode incorporated. Enables simplified fabrication, high-density mounting, and miniaturization in end products due to the surface mountable package. 0.6 4.2 1.2 1.0 2.54 1 2 1.0 2.54 6.2 5.2 0.3 0.6 7.8 5.08 10.0 6.0 0.7 1 : Gate 2 : Source 3 : Drain SANYO : ZP Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Conditions 2.5 Ratings --250 30 --9 Unit V V A A W C C PW10s, duty cycle1% Tc=25C --36 50 150 --55 to +150 Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Voltage Gate-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS V(BR)GSS IDSS IGSS VGS(off) yfs RDS(on) Ciss Coss Crss Conditions ID=-1mA, VGS=0 IG=100A, VDS=0 VDS=--250V, VGS=0 VGS=25V, VDS=0 VDS=--10V, ID=--1mA VDS=--10V, ID=-5A ID=-5A, VGS=--10V VDS=--20V, f=1MHz VDS=--20V, f=1MHz VDS=--20V, f=1MHz --2.0 4.8 8.0 0.4 1950 505 230 0.55 Ratings min --250 30 --1.0 10 --3.0 typ max Unit V V mA A V S pF pF pF Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 22004 TS IM TA-3871 No.5442-1/4 2SJ456 Continued from preceding page. Parameter Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Diode Reverse Recovery Time Symbol td(on) tr td(off) tf VSD trr Conditions See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. IS=--9A, VGS=0 IS=--9A, di / dt=100A / s Ratings min typ 28 125 460 160 --1.0 180 --1.5 max Unit ns ns ns ns V ns Switching Time Test Circuit VIN 0V --10V VIN ID= --5.0A RL=20.0 VDD= --100V D PW=10s D.C.1% VOUT G 2SJ456 P.G 50 S --16 --14 --12 --10 --8 --6 --4 --2 0 0 --1 --2 --3 ID -- VDS --6 V Tc=25C --16 --14 --12 --10 --8 --6 ID -- VGS Tc= --2 5C Drain Current, ID -- A 0V -8 --4V Drain Current, ID -- A --1 Tc= 7 --4 --2 0 5C VGS= --3V --4 --5 --6 --7 --8 --9 --10 0 --1 --2 --3 --25 25 C C --4 25C --5 V 75C VDS= --10V --6 IT05543 Drain-to-Source Voltage, VDS -- V 0.6 IT05542 0.8 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V RDS(on) -- Tc ID= --5A Static Drain-to-Source On-State Resistance, RDS(on) -- Static Drain-to-Source On-State Resistance, RDS(on) -- 0.7 VGS= --10A ID= --5A 0.5 Tc=75C 0.6 0.4 25C 0.5 0.4 --25C 0.3 0.3 0.2 0.1 --50 0.2 --2 --4 --6 --8 --10 --12 --14 --16 IT05544 --25 0 25 50 75 100 125 150 Gate-to-Source Voltage, VGS -- V Case Temperature, Tc -- C IT05545 No.5442-2/4 2SJ456 3 yfs -- ID VDS= --10V Forward Drain Current, IF -- A 5 3 2 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 --0.01 IF -- VSD VGS=0 Forward Transfer Admittance, yfs -- S 2 10 7 5 3 2 25 5C --2 C 1.0 7 5 3 --0.1 2 3 5 7 --1.0 2 3 5 Drain Current, ID -- A 1000 7 --10 IT05546 10000 7 5 7 0 --0.3 75 C 25 C --25 C --0.6 --0.9 = Tc C 75 Tc= --1.2 --1.5 IT05547 SW Time -- ID td(off) Ciss, Coss, Crss -- VDS f=1MHz Diode Forward Voltage, VSD -- V Switching Time, SW Time -- ns 5 Ciss, Coss, Crss -- pF 3 2 3 2 Ciss tf tr 100 7 5 3 2 1000 7 5 3 2 Coss td(on) VDD= --100V VGS= --10V 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 Crs s 10 --0.1 100 0 --5 --10 --15 --20 --25 --30 IT05549 Drain Current, ID -- A --10 IT05548 7 5 3 2 VGS -- Qg Drain-to-Source Voltage, VDS -- V ASO Gate-to-Source Voltage, VGS -- V VDS= --100V ID= --9A --8 IDP= --36A 10 1m s <1s 10 s 0 s Drain Current, ID -- A --6 --10 7 5 3 2 --1.0 7 5 3 2 ID= --9A DC 10 op ms tio n era --4 Operation in this area is limited by RDS(on). Tc=25C Single pulse 2 3 5 7 --10 2 3 5 7 --100 2 3 5 --2 0 0 20 40 60 80 100 120 IT05550 --0.1 --1.0 Total Gate Charge, Qg -- nC 60 PD -- Tc Drain-to-Source Voltage, VDS -- V IT05551 Allowable Power Dissipation, PD -- W 50 40 30 20 10 0 0 20 40 60 80 100 120 140 160 Case Temperature, Tc -- C IT05552 No.5442-3/4 2SJ456 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of February, 2004. Specifications and information herein are subject to change without notice. PS No.5442-4/4 |
Price & Availability of 2SJ456
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